BUV26 ? BUV26a 29/09/2012 comset semiconductors 1 | 3 semiconductors high-speed,npn power transistors in a to-220 envelope. they are intended for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. compliance to rohs. absolute maximum ratings symbol ratings value unit BUV26 BUV26a v cbo collector-base voltage i e = 0 180 200 v v ceo collector-emitter voltage i b = 0 90 100 v v ebo emitter-base voltage i c = 0 7 5 v i c collector current 14 a i cm collector peak current t p = 10ms 25 a i b base current 4 a i bm base current t p = 10ms 6 a p t power dissipation 85 65 w t j junction temperature 150 c t stg storage temperature range -65 to 150 limiting values in accordance with the absolute maximum system (iec 134) thermal characteristics symbol ratings value unit r thj-mb from junction to mounting base BUV26 1.76 c/w BUV26a silicon power transistors
BUV26 ? BUV26a 29/09/2012 comset semiconductors 2 | 3 semiconductors electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) value unit min typ max i cex collector cutoff current (*) v ce =v cesmax v be = 1.5v, t j = 125c BUV26 - - 1 ma BUV26a i ebo emitter cutoff current v eb = 5 v, i c = 0 BUV26 - - 1 ma BUV26a v ce0sust collector-emitter sustaining voltage i b = 0 , i c = 0.2 a l = 25 mh BUV26 90 - - v BUV26a 100 - - v ce(sat) collector-emitter saturation voltage i c = 6 a, i b = 600 ma BUV26 - - 0.6 v i c = 5 a, i b = 500 ma BUV26a - - 0.5 i c =12 a, i b = 1.2 a BUV26 - - 1.5 i c =10 a, i b = 1 a BUV26a - - 1 v be(sat) base-emitter saturation voltage i c = 6 a, i b = 600 ma BUV26 - - 1.2 v i c = 5 a, i b = 500 ma BUV26a - - 1.2 i c =12 a, i b = 1.2 a BUV26 - - 2 i c =10 a, i b = 1 a BUV26a - - 1.5 switching times symbol ratings test condition(s) value unit min typ max t on turn-on time for BUV26 i c = 12 a , v cc = 50 v i b1 = 1.2 a , i b2 = 2 a for BUV26a i c = 10 a , v cc = 50 v i b1 = 1 a , i b2 = 2 a BUV26 - 0.4 0.8 s BUV26a t off turn-off time BUV26 - 0.5 1.2 BUV26a t f fall time BUV26 - 0.12 0.4 BUV26a (*) mesured with a half-sinewave voltage (curve tracer).
BUV26 ? BUV26a 29/09/2012 comset semiconductors 3 | 3 semiconductors mechanical data case to-220 dimensions (mm) min. max. a 9,90 10,30 b 15,65 15,90 c 13,20 13,40 d 6,45 6,65 e 4,30 4,50 f 2,70 3,15 g 2,60 3,00 h 15,75 17.15 l 1,15 1,40 m 3,50 3,70 n - 1,37 p 0,46 0,55 r 2,50 2,70 s 4,98 5,08 t 2.49 2.54 u 0,70 0,90 revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com pin 1 : base pin 2 : collector pin 3 : emitter package collector
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